CSD17308Q3 - 30V N 通道 NexFET 功率 MOSFET
CSD17308Q3是TI公司的一款N通道MOSFET晶体管产品,CSD17308Q3是30V N 通道 NexFET 功率 MOSFET,本页介绍了CSD17308Q3的产品说明、应用、特性等,并给出了与CSD17308Q3相关的TI元器件型号供参考。
CSD17308Q3 - 30V N 通道 NexFET 功率 MOSFET - N通道MOSFET晶体管 - 功率MOSFET - TI公司(Texas Instruments,德州仪器)
产品特性
- Optimized for 5-V Gate Drive
- Ultra-Low Qg and Qgd
- Low Thermal Resistance
- Avalanche Rated
- Pb Free Terminal Plating
- RoHS Compliant
- Halogen Free
- VSON 3.3 mm × 3.3 mm Plastic Package
产品应用
- Notebook Point of Load
- Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems
产品说明
This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications.
Top ViewProduct Summary
TA = 25°C | VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-source voltage | 30 | V | |
Qg | Gate charge total (4.5 V) | 3.9 | nC | |
Qgd | Gate charge gate to drain | 0.8 | nC | |
RDS(on) | Drain-to-source on resistance | VGS = 3 V | 12.5 | mΩ |
VGS = 4.5 V | 9.4 | mΩ | ||
VGS = 8 V | 8.2 | mΩ | ||
VGS(th) | Threshold voltage | 1.3 | V |
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