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EMB1412 - 产品图解:
EMB1412-EMB1412 MOSFET 栅极驱动器
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TI产品 - EMB1412介绍
EMB1412 - EMB1412 MOSFET 栅极驱动器

EMB1412是TI公司的一款低侧驱动器产品,EMB1412是EMB1412 MOSFET 栅极驱动器,本页介绍了EMB1412的产品说明、应用、特性等,并给出了与EMB1412相关的TI元器件型号供参考。

EMB1412 - EMB1412 MOSFET 栅极驱动器 - 低侧驱动器 - MOSFET和IGBT栅极驱动器 - TI公司(Texas Instruments,德州仪器)

产品特性
  • Compound CMOS and Bipolar Outputs Reduce Output Current Variation
  • 7 A Sink/3 A Source Current
  • Fast Propagation Times (25 ns Typical)
  • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load)
  • Inverting and Non-Inverting Inputs Provide Either Configuration with a Single Device
  • Supply Rail Under-Voltage Lockout Protection
  • Dedicated Input Ground (IN_REF) for Split Supply or Single Supply Operation
  • Thermally Enhanced 8-Pin VSSOP Package
  • Output Swings from VCC to VEE Which can be Negative Relative to Input Ground
产品应用
  • Li-Ion Battery Management Systems
  • Hybrid and Electric Vehicles
  • Grid Storage
  • 48 V Systems Supply
  • UPS
产品说明

The EMB1412 MOSFET gate driver provides high peak gate drive current in 8-lead exposed-pad VSSOP package, with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7-A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The EMB1412 provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.

产品器件信息
PART NUMBERPACKAGEBODY SIZE (NOM)
EMB1412HVSSOP (8)3.00 mm x 3.00 mm
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