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SN74CB3Q16210 - 产品图解:
SN74CB3Q16210-20 位 FET 总线开关,2.5V/3.3V 低压高带宽总线开关
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TI产品 - SN74CB3Q16210介绍
SN74CB3Q16210 - 20 位 FET 总线开关,2.5V/3.3V 低压高带宽总线开关

SN74CB3Q16210是TI公司的一款数字开关产品,SN74CB3Q16210是20 位 FET 总线开关,2.5V/3.3V 低压高带宽总线开关,本页介绍了SN74CB3Q16210的产品说明、应用、特性等,并给出了与SN74CB3Q16210相关的TI元器件型号供参考。

SN74CB3Q16210 - 20 位 FET 总线开关,2.5V/3.3V 低压高带宽总线开关 - 数字开关 - 信号开关 - TI公司(Texas Instruments,德州仪器)

产品描述

The SN74CB3Q16210 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q16210 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

The SN74CB3Q16210 is organized as two 10-bit bus switches with separate output-enable (1OE\, 2OE\) inputs. It can be used as two 10-bit bus switches or as one 20-bit bus switch. When OE\ is low, the associated 10-bit bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the associated 10-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

产品特性

  • Member of the Texas Instruments Widebus™ Family
  • High-Bandwidth Data Path (Up To 500 MHz)
  • 5-V Tolerant I/Os with Device Powered Up or Powered Down
  • Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 5 Typical)
  • Rail-to-Rail Switching on Data I/O Ports
    • 0-V to 5-V Switching With 3.3-V VCC
    • 0-V to 3.3-V Switching With 2.5-V VCC
  • Bidirectional Data Flow, With Near-Zero Propagation Delay
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 4 pF Typical)
  • Fast Switching Frequency (fOE\ = 20 MHz Max)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (ICC = 1 mA Typical)
  • VCC Operating Range From 2.3 V to 3.6 V
  • Data I/Os Support 0 V to 5 V Signaling Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
  • Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: PCI Interface, Differential Signal Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, literature number SCDA008. Widebus is a trademark of Texas Instruments.

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