• Drives Two N-Channel MOSFETs with 14-ns Adaptive Dead Time
• Wide Gate Drive Voltage: 4.5 V Up to 8.8 V With Best Efficiency at 7 V to 8 V
• Wide Power System Train Input Voltage: 3 V Up to 27 V
• Wide Input PWM Signals: 2.0 V up to 13.2-V Amplitude
• Capable to Drive MOSFETs with ≥40-A Current per Phase
• High Frequency Operation: 14-ns Propagation Delay and 10-ns Rise/Fall Time Allow FSW – 2 MHz
• Capable to Propagate <30-ns Input PWM Pulses
• Low-Side Driver Sink On-Resistance (0.4 Ω) Prevents dV/dT Related Shoot-Through Current
• 3-State PWM Input for Power Stage Shutdown
• Space Saving Enable (Input) and Power Good (Output) Signals on Same Pin
• Thermal Shutdown
• UVLO Protection
• Internal Bootstrap Diode
• Economical SOIC-8 and Thermally Enhanced 3-mm x 3-mm DFN-8 Packages
• High Performance Replacement for Popular 3-State Input Drivers

• Multi-Phase DC-to-DC Converters with Analog or Digital Control
• Desktop and Server VRMs and EVRDs
• Portable and Notebook Regulators
• Synchronous Rectification for Isolated Power Supplies

The TPS28226 is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. The TPS28226 is a solution that provides high efficiency, small size and low EMI emissions.

The efficiency is achieved by up to 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capability. The 0.4-Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge configuration.