• 5962R10221:
  • Radiation Hardness Assurance (RHA) up to TID 100 krad (Si)
  • ELDRS Free 100 krad (Si) – 10 mRAD(Si)/s
  • Single Event Latchup (SEL) Immune to LET = 85 MeV-cm2/mg (See Radiation Report)
  • SEB and SEGR Immune to 85 MeV-cm2/mg, SOA Curve Available (See Radiation Report)
  • SET/SEFI Cross-Section Plot Available (See Radiation Report)
• Peak Efficiency: 95% (VO = 3.3 V)
• Integrated 55-mΩ/50-mΩ MOSFETs
• Split Power Rail: 1.6 to 6.3 V on PVIN
• Power Rail: 3 to 6.3 V on VIN
• 6-A Maximum Output Current
• Flexible Switching Frequency Options:
  • 100-kHz to 1-MHz Adjustable Internal Oscillator
  • External Sync Capability: 100 kHz to 1 MHz
  • Sync Pin can be Configured as a 500-kHz Output for Master/Slave Applications
• 0.795-V ±1.258% Voltage Reference at 25°C
• Monotonic Start-Up into Prebiased Outputs
• Adjustable Soft Start Through External Capacitor
• Input Enable and Power-Good Output for Power Sequencing
• Power Good Output Monitor for Undervoltage and Overvoltage
• Adjustable Input Undervoltage Lockout (UVLO)
• 20-Pin Thermally-Enhanced Ceramic Flatpack Package (HKH)
• See www.ti.com/swift for SWIFT™ Documentation
• See the Tools & Software Tab

Efficiency vs Load Current, Vin = 5 V

• Space Satellite Point of Load Supply for FPGAs, Microcontrollers, and ASICs
• Space Satellite Payloads
• Radiation-Tolerant Applications
• Available in Military (–55°C to 125°C) Temperature Range
• Engineering Evaluation (/EM) Samples are Available(1)

The TPS50601-SP is a radiation hardened, 6.3-V, 6-A synchronous step-down converter, which is optimized for small designs through high efficiency and integrating the high-side and low-side MOSFETs. Further space savings are achieved through current mode control, which reduces component count, and a high switching frequency, reducing the inductor's footprint. The devices are offered in a thermally enhanced 20-pin ceramic, dual in-line flatpack package.